DMN2016UTS-13
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Diodes Incorporated DMN2016UTS-13

Manufacturer No:
DMN2016UTS-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2016UTS-13 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 20V 8.58A 8-TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:8.58A
Rds On (Max) @ Id, Vgs:14.5mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1495pF @ 10V
Power - Max:880mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package:8-TSSOP
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Similar Products

Part Number DMN2016UTS-13 DMN2019UTS-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 8.58A 5.4A
Rds On (Max) @ Id, Vgs 14.5mOhm @ 9.4A, 4.5V 18.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 4.5V 8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1495pF @ 10V 143pF @ 10V
Power - Max 880mW 780mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP 8-TSSOP

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