DMN2016LHAB-7
  • Share:

Diodes Incorporated DMN2016LHAB-7

Manufacturer No:
DMN2016LHAB-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2016LHAB-7 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 20V 7.5A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:7.5A
Rds On (Max) @ Id, Vgs:15.5mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1550pF @ 10V
Power - Max:1.2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UDFN Exposed Pad
Supplier Device Package:U-DFN2030-6 (Type B)
0 Remaining View Similar

In Stock

$0.69
882

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN2016LHAB-7 DMN2014LHAB-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 7.5A 9A
Rds On (Max) @ Id, Vgs 15.5mOhm @ 4A, 4.5V 13mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 10V 1550pF @ 10V
Power - Max 1.2W 800mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-UDFN Exposed Pad 6-UFDFN Exposed Pad
Supplier Device Package U-DFN2030-6 (Type B) U-DFN2030-6 (Type B)

Related Product By Categories

IRF7319TRPBF
IRF7319TRPBF
Infineon Technologies
MOSFET N/P-CH 30V 8SOIC
CAS120M12BM2
CAS120M12BM2
Wolfspeed, Inc.
MOSFET 2N-CH 1200V 193A MODULE
FX20KMJ-3#B00
FX20KMJ-3#B00
Renesas Electronics America Inc
HIGH SPEED SWITCHING P CHANNEL ,
PMDT290UNE,115
PMDT290UNE,115
Nexperia USA Inc.
MOSFET 2N-CH 20V 0.8A SOT666
NTE4007
NTE4007
NTE Electronics, Inc
IC-CMOS DUAL COMPL. PAIR
SI1926DL-T1-E3
SI1926DL-T1-E3
Vishay Siliconix
MOSFET 2N-CH 60V 0.37A SC-70-6
DMHC3025LSD-13
DMHC3025LSD-13
Diodes Incorporated
MOSFET 2N/2P-CH 30V 8SO
PJS6603_S2_00001
PJS6603_S2_00001
Panjit International Inc.
30V COMPLEMENTARY ENHANCEMENT MO
NTHD3100CT1
NTHD3100CT1
onsemi
MOSFET N/P-CH 20V CHIPFET
SI3585DV-T1-E3
SI3585DV-T1-E3
Vishay Siliconix
MOSFET N/P-CH 20V 2A 6-TSOP
HP8K24TB
HP8K24TB
Rohm Semiconductor
HP8K24 IS THE HIGH RELIABILITY T
SH8KA2TB1
SH8KA2TB1
Rohm Semiconductor
30V NCH+NCH POWER MOSFET. SH8KA2

Related Product By Brand

SMCJ40A-13-F
SMCJ40A-13-F
Diodes Incorporated
TVS DIODE 40VWM 64.5VC SMC
P6KE220CA-T
P6KE220CA-T
Diodes Incorporated
TVS DIODE 185VWM 328VC DO15
FN7770021
FN7770021
Diodes Incorporated
XTAL OSC XO 77.7600MHZ CMOS SMD
FN9830010
FN9830010
Diodes Incorporated
XTAL OSC XO 98.3040MHZ CMOS SMD
SPA000002
SPA000002
Diodes Incorporated
XTAL OSC XO 100.0000MHZ HCSL SMD
FNF620047J
FNF620047J
Diodes Incorporated
XTAL OSC SEAM7050 SMD
SBR02U100LP-7
SBR02U100LP-7
Diodes Incorporated
DIODE SBR 100V 250MA 2DFN
DZ23C24-7-F
DZ23C24-7-F
Diodes Incorporated
DIODE ZENER ARRAY 24V SOT23-3
DDZ22DS-7
DDZ22DS-7
Diodes Incorporated
DIODE ZENER 22V 200MW SOD323
DST3906DJ-7
DST3906DJ-7
Diodes Incorporated
TRANS 2PNP 40V 0.2A SOT963
DMN1250UFEL-7
DMN1250UFEL-7
Diodes Incorporated
MOSFET BVDSS: 8V 24V U-QFN1515-1
PI3HDX511AZLEX
PI3HDX511AZLEX
Diodes Incorporated
IC INTERFACE SPECIALIZED 32TQFN