DMN2014LHAB-7
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Diodes Incorporated DMN2014LHAB-7

Manufacturer No:
DMN2014LHAB-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2014LHAB-7 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 20V 9A 6-UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:9A
Rds On (Max) @ Id, Vgs:13mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1550pF @ 10V
Power - Max:800mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UFDFN Exposed Pad
Supplier Device Package:U-DFN2030-6 (Type B)
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Similar Products

Part Number DMN2014LHAB-7 DMN2016LHAB-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 9A 7.5A
Rds On (Max) @ Id, Vgs 13mOhm @ 4A, 4.5V 15.5mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 10V 1550pF @ 10V
Power - Max 800mW 1.2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-UFDFN Exposed Pad 6-UDFN Exposed Pad
Supplier Device Package U-DFN2030-6 (Type B) U-DFN2030-6 (Type B)

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