DMN2013UFX-7
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Diodes Incorporated DMN2013UFX-7

Manufacturer No:
DMN2013UFX-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2013UFX-7 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 20V 10A 6-DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Standard
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Rds On (Max) @ Id, Vgs:11.5mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57.4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:2607pF @ 10V
Power - Max:2.14W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VFDFN Exposed Pad
Supplier Device Package:W-DFN5020-6
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Similar Products

Part Number DMN2013UFX-7 DMN2016UFX-7   DMN2011UFX-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Standard
Drain to Source Voltage (Vdss) 20V 24V 20V
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 9.9A (Ta) 12.2A (Ta)
Rds On (Max) @ Id, Vgs 11.5mOhm @ 8.5A, 4.5V 15mOhm @ 6.5A, 4.5V 9.5mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.5V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57.4nC @ 8V 14nC @ 4.5V 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2607pF @ 10V 950pF @ 10V 2248pF @ 10V
Power - Max 2.14W 1.07W (Ta) 2.1W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-VFDFN Exposed Pad 4-VFDFN Exposed Pad 4-VFDFN Exposed Pad
Supplier Device Package W-DFN5020-6 V-DFN2050-4 V-DFN2050-4

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