DMN2013UFX-7
  • Share:

Diodes Incorporated DMN2013UFX-7

Manufacturer No:
DMN2013UFX-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2013UFX-7 Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 20V 10A 6-DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual) Common Drain
FET Feature:Standard
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Rds On (Max) @ Id, Vgs:11.5mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:57.4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:2607pF @ 10V
Power - Max:2.14W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VFDFN Exposed Pad
Supplier Device Package:W-DFN5020-6
0 Remaining View Similar

In Stock

$0.29
1,081

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN2013UFX-7 DMN2016UFX-7   DMN2011UFX-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Standard Standard Standard
Drain to Source Voltage (Vdss) 20V 24V 20V
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 9.9A (Ta) 12.2A (Ta)
Rds On (Max) @ Id, Vgs 11.5mOhm @ 8.5A, 4.5V 15mOhm @ 6.5A, 4.5V 9.5mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.5V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57.4nC @ 8V 14nC @ 4.5V 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2607pF @ 10V 950pF @ 10V 2248pF @ 10V
Power - Max 2.14W 1.07W (Ta) 2.1W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-VFDFN Exposed Pad 4-VFDFN Exposed Pad 4-VFDFN Exposed Pad
Supplier Device Package W-DFN5020-6 V-DFN2050-4 V-DFN2050-4

Related Product By Categories

NDS9936
NDS9936
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
ECH8667-TL-H
ECH8667-TL-H
onsemi
MOSFET 2P-CH 30V 5.5A 8ECH
VMM90-09F
VMM90-09F
IXYS
MOSFET 2N-CH 900V 85A Y3-LI
NTMD3P03R2G
NTMD3P03R2G
onsemi
MOSFET 2P-CH 30V 2.34A 8SOIC
BUK9K22-80EX
BUK9K22-80EX
Nexperia USA Inc.
MOSFET 2 N-CH 80V 21A LFPAK56D
RM10N40S8
RM10N40S8
Rectron USA
MOSFET 2 N-CHANNEL 40V 10A 8SOP
AO4822A
AO4822A
Alpha & Omega Semiconductor Inc.
MOSFET 2N-CH 30V 8A 8SOIC
APTM100H18FG
APTM100H18FG
Microchip Technology
MOSFET 4N-CH 1000V 43A SP6
TPCF8201(TE85L,F,M
TPCF8201(TE85L,F,M
Toshiba Semiconductor and Storage
MOSFET 2N-CH 20V 3A VS-8
AON7812
AON7812
Alpha & Omega Semiconductor Inc.
MOSFET 2N-CH 30V 6A
IPG20N06S4L14ATMA1
IPG20N06S4L14ATMA1
Infineon Technologies
MOSFET 2N-CH 8TDSON
IRF7331TRPBF-1
IRF7331TRPBF-1
Infineon Technologies
MOSFET 2N-CH 20V 7A 8-SOIC

Related Product By Brand

P4SMAJ20ADF-13
P4SMAJ20ADF-13
Diodes Incorporated
TVS DIODE 20VWM 32.4VC D-FLAT
FL2210006
FL2210006
Diodes Incorporated
CRYSTAL 22.1184MHZ 20PF SMD
SBR20100CT-G
SBR20100CT-G
Diodes Incorporated
DIODE SBR 100V 20A TO-220AB
1N4448HWS-13-F
1N4448HWS-13-F
Diodes Incorporated
DIODE GEN PURP 80V 250MA SOD323
ES3BB-13
ES3BB-13
Diodes Incorporated
DIODE GEN PURP 100V 3A SMB
DDTC143TCAQ-7-F
DDTC143TCAQ-7-F
Diodes Incorporated
PREBIAS TRANSISTOR SOT23 T&R 3K
DMP2035U-7
DMP2035U-7
Diodes Incorporated
MOSFET P-CH 20V 3.6A SOT23-3
AP2553FDC-7
AP2553FDC-7
Diodes Incorporated
IC PWR SWITCH P-CHANNEL 1:1 6DFN
AP7383-44WR-7
AP7383-44WR-7
Diodes Incorporated
IC REG LIN 4.4V SOT25 T&R 3K
AP7354D-15FS4-7
AP7354D-15FS4-7
Diodes Incorporated
IC REG LINEAR 1.5V 150MA 4DFN
AH49EZ3-G1
AH49EZ3-G1
Diodes Incorporated
SENSOR HALL EFFECT ANALOG TO92S
AH3377-P-A
AH3377-P-A
Diodes Incorporated
MAGNETIC SWITCH UNIPOLAR 3SIP