DMN2013UFDE-7
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Diodes Incorporated DMN2013UFDE-7

Manufacturer No:
DMN2013UFDE-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2013UFDE-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 10.5A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:10.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:11mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25.8 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2453 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):660mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:U-DFN2020-6 (Type E)
Package / Case:6-PowerUDFN
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Similar Products

Part Number DMN2013UFDE-7 DMN2015UFDE-7   DMN2011UFDE-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 10.5A (Ta) 10.5A (Ta) 11.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 11mOhm @ 8.5A, 4.5V 11.6mOhm @ 8.5A, 4.5V 9.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25.8 nC @ 8 V 45.6 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±8V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 2453 pF @ 10 V 1779 pF @ 10 V 2248 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 660mW (Ta) 660mW (Ta) 610mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package U-DFN2020-6 (Type E) U-DFN2020-6 (Type E) U-DFN2020-6 (Type E)
Package / Case 6-PowerUDFN 6-PowerUDFN 6-PowerUDFN

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