DMN2011UFDF-7
  • Share:

Diodes Incorporated DMN2011UFDF-7

Manufacturer No:
DMN2011UFDF-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2011UFDF-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 14.2A 6UDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:14.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:9.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2248 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:U-DFN2020-6 (Type F)
Package / Case:6-UDFN Exposed Pad
0 Remaining View Similar

In Stock

$0.50
96

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN2011UFDF-7 DMN2011UFDE-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 14.2A (Ta) 11.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 7A, 4.5V 9.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 2248 pF @ 10 V 2248 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 2.1W (Ta) 610mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package U-DFN2020-6 (Type F) U-DFN2020-6 (Type E)
Package / Case 6-UDFN Exposed Pad 6-PowerUDFN

Related Product By Categories

BUK7908-40AIE127
BUK7908-40AIE127
NXP USA Inc.
N-CHANNEL POWER MOSFET
IXTA26P20P-TRL
IXTA26P20P-TRL
IXYS
MOSFET P-CH 200V 26A TO263
PMPB08R5XNX
PMPB08R5XNX
Nexperia USA Inc.
PMPB08R5XN/SOT1220-2/DFN2020M-
SIS822DNT-T1-GE3
SIS822DNT-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 12A PPAK1212-8
PMPB15XPAX
PMPB15XPAX
Nexperia USA Inc.
MOSFET P-CH 12V 8.2A DFN2020MD-6
SIHP22N60E-E3
SIHP22N60E-E3
Vishay Siliconix
MOSFET N-CH 600V 21A TO220AB
STW60NM50N
STW60NM50N
STMicroelectronics
MOSFET N-CH 500V 68A TO247
IRFR3706CTRLPBF
IRFR3706CTRLPBF
Infineon Technologies
MOSFET N-CH 20V 75A DPAK
2SK3703-1E
2SK3703-1E
onsemi
MOSFET N-CH 60V 30A TO220F-3SG
NVMFS5C682NLT3G
NVMFS5C682NLT3G
onsemi
MOSFET N-CH 60V 5DFN
TSM3N90CZ C0G
TSM3N90CZ C0G
Taiwan Semiconductor Corporation
MOSFET N-CH 900V 2.5A TO220
RV1C002UNT2CL
RV1C002UNT2CL
Rohm Semiconductor
MOSFET N-CH 20V 150MA VML0806

Related Product By Brand

SMAJ8.0A-13-F
SMAJ8.0A-13-F
Diodes Incorporated
TVS DIODE 8VWM 13.6VC SMA
SMCJ8.0A-13-F
SMCJ8.0A-13-F
Diodes Incorporated
TVS DIODE 8VWM 13.6VC SMC
GC0800059
GC0800059
Diodes Incorporated
CRYSTAL 8.0000MHZ 20PF
FNA620051
FNA620051
Diodes Incorporated
XTAL OSC XO 106.2500MHZ CMOS SMD
BAS28-7
BAS28-7
Diodes Incorporated
DIODE ARRAY GP 85V 215MA SOT143
UDZ7V5B-7
UDZ7V5B-7
Diodes Incorporated
DIODE ZENER 7.5V 200MW SOD323
BZX84C24Q-7-F
BZX84C24Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
FZT796ATA
FZT796ATA
Diodes Incorporated
TRANS PNP 200V 0.5A SOT223-3
DMC2020USD-13
DMC2020USD-13
Diodes Incorporated
MOSFET N/P-CH 20V 7.8A/6.3A 8SO
APX803S00-29SR-7
APX803S00-29SR-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
PT7M7436TAEX
PT7M7436TAEX
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23-6
ZRC250F03TA
ZRC250F03TA
Diodes Incorporated
IC VREF SHUNT 3% SOT23