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| Part Number | DMN2011UFDE-7 | DMN2011UFDF-7 | DMN2015UFDE-7 | DMN2013UFDE-7 |
|---|---|---|---|---|
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Status | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 11.7A (Ta) | 14.2A (Ta) | 10.5A (Ta) | 10.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V | 1.5V, 4.5V | 1.5V, 4.5V | 1.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 7A, 4.5V | 9.5mOhm @ 7A, 4.5V | 11.6mOhm @ 8.5A, 4.5V | 11mOhm @ 8.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1.1V @ 250µA | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V | 56 nC @ 10 V | 45.6 nC @ 10 V | 25.8 nC @ 8 V |
| Vgs (Max) | ±12V | ±12V | ±12V | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 2248 pF @ 10 V | 2248 pF @ 10 V | 1779 pF @ 10 V | 2453 pF @ 10 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 610mW (Ta) | 2.1W (Ta) | 660mW (Ta) | 660mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | U-DFN2020-6 (Type E) | U-DFN2020-6 (Type F) | U-DFN2020-6 (Type E) | U-DFN2020-6 (Type E) |
| Package / Case | 6-PowerUDFN | 6-UDFN Exposed Pad | 6-PowerUDFN | 6-PowerUDFN |
