DMN2005LP4K-7
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Diodes Incorporated DMN2005LP4K-7

Manufacturer No:
DMN2005LP4K-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2005LP4K-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 200MA 3DFN
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:900mV @ 100µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:41 pF @ 3 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:X2-DFN1006-3
Package / Case:3-XFDFN
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Similar Products

Part Number DMN2005LP4K-7 DMN2005LPK-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta) 440mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V 1.5V, 4V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V 1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 900mV @ 100µA 1.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 41 pF @ 3 V -
FET Feature - -
Power Dissipation (Max) 400mW (Ta) 450mW (Ta)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package X2-DFN1006-3 X1-DFN1006-3
Package / Case 3-XFDFN 3-UFDFN

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