DMN2005K-7
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Diodes Incorporated DMN2005K-7

Manufacturer No:
DMN2005K-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2005K-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 300MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 2.7V
Rds On (Max) @ Id, Vgs:1.7Ohm @ 200mA, 2.7V
Vgs(th) (Max) @ Id:900mV @ 100µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number DMN2005K-7 DMN2004K-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta) 630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 2.7V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 1.7Ohm @ 200mA, 2.7V 550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 100µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±10V ±8V
Input Capacitance (Ciss) (Max) @ Vds - 150 pF @ 16 V
FET Feature - -
Power Dissipation (Max) 350mW (Ta) 350mW (Ta)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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