DMN2004WK-7
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Diodes Incorporated DMN2004WK-7

Manufacturer No:
DMN2004WK-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN2004WK-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 540MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):200mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number DMN2004WK-7 DMN2004K-7   DMN2004TK-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 540mA (Ta) 630mA (Ta) 540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 550mOhm @ 540mA, 4.5V 550mOhm @ 540mA, 4.5V 550mOhm @ 540mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 16 V 150 pF @ 16 V 150 pF @ 16 V
FET Feature - - -
Power Dissipation (Max) 200mW (Ta) 350mW (Ta) 150mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-23-3 SOT-523
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SOT-523

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