Diodes Incorporated-DMN10H6D2LFDB-13 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	270mA (Ta)
Rds On (Max) @ Id, Vgs:	6Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id:	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	41pF @ 50V
Power - Max:	700mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	U-DFN2020-6 (Type B)

Diodes Incorporated DMN10H6D2LFDB-13