DMN10H220LE-13
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Diodes Incorporated DMN10H220LE-13

Manufacturer No:
DMN10H220LE-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN10H220LE-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 2.3A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:220mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:401 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-3
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number DMN10H220LE-13 DMN10H220L-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 1.6A, 10V 220mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V 8.3 nC @ 10 V
Vgs (Max) ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 401 pF @ 25 V 401 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-3 SOT-23-3
Package / Case TO-261-4, TO-261AA TO-236-3, SC-59, SOT-23-3

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