DMN10H220LE-13
  • Share:

Diodes Incorporated DMN10H220LE-13

Manufacturer No:
DMN10H220LE-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN10H220LE-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 2.3A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:220mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:401 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223-3
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$0.64
439

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN10H220LE-13 DMN10H220L-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta) 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 1.6A, 10V 220mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V 8.3 nC @ 10 V
Vgs (Max) ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 401 pF @ 25 V 401 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.8W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-223-3 SOT-23-3
Package / Case TO-261-4, TO-261AA TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IXTP140P05T
IXTP140P05T
IXYS
MOSFET P-CH 50V 140A TO220AB
FDB7030BL
FDB7030BL
Fairchild Semiconductor
60A, 30V, 0.009OHM, N-CHANNEL,
SI7898DP-T1-E3
SI7898DP-T1-E3
Vishay Siliconix
MOSFET N-CH 150V 3A PPAK SO-8
SIDR402DP-T1-RE3
SIDR402DP-T1-RE3
Vishay Siliconix
N-CHANNEL 40-V (D-S) MOSFET
TSM043NH04LCR RLG
TSM043NH04LCR RLG
Taiwan Semiconductor Corporation
40V, 54A, SINGLE N-CHANNEL POWER
IAUA250N04S6N005AUMA1
IAUA250N04S6N005AUMA1
Infineon Technologies
OPTIMOS POWER MOSFET
DMTH3002LK3-13
DMTH3002LK3-13
Diodes Incorporated
MOSFET BVDSS: 25V~30V TO252 T&R
TK12A53D(STA4,Q,M)
TK12A53D(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 525V 12A TO220SIS
IRF7807D2TR
IRF7807D2TR
Infineon Technologies
MOSFET N-CH 30V 8.3A 8SO
NTD4804N-35G
NTD4804N-35G
onsemi
MOSFET N-CH 30V 14.5A/124A IPAK
NTMFS5C410NLTWFT1G
NTMFS5C410NLTWFT1G
onsemi
MOSFET N-CH 40V 50A/330A 5DFN
AO4476AL
AO4476AL
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 15A 8SOIC

Related Product By Brand

F60800011
F60800011
Diodes Incorporated
IC REGULATOR
FJ2500016
FJ2500016
Diodes Incorporated
XTAL OSC XO 25.0000MHZ CMOS SMD
B140B-13-F
B140B-13-F
Diodes Incorporated
DIODE SCHOTTKY 40V 1A SMB
APD160VD-G1
APD160VD-G1
Diodes Incorporated
DIODE SCHOTTKY 60V 1A DO41
DZ23C24-7-F
DZ23C24-7-F
Diodes Incorporated
DIODE ZENER ARRAY 24V SOT23-3
SD1A150G
SD1A150G
Diodes Incorporated
THYRISTOR DO-15 T&R 4K
DXT13003DK-13
DXT13003DK-13
Diodes Incorporated
TRANS NPN 450V 1.5A TO252-3
ZXTP2012ZQTA
ZXTP2012ZQTA
Diodes Incorporated
TRANS PNP 60V 4.3A SOT89
PAM8945PJR
PAM8945PJR
Diodes Incorporated
IC AMP G MONO 4W WQFN3020-12
PI3B16215A
PI3B16215A
Diodes Incorporated
IC BUS SWITCH 2 X 10:10 48TSSOP
PI5C3383QE
PI5C3383QE
Diodes Incorporated
IC BUS FET EXCHG SW 5X2:2 24QSOP
AP7341-18FS4-7
AP7341-18FS4-7
Diodes Incorporated
IC REG LINEAR 1.8V 300MA 4DFN