DMN10H170SVT-13
  • Share:

Diodes Incorporated DMN10H170SVT-13

Manufacturer No:
DMN10H170SVT-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN10H170SVT-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 2.6A TSOT26
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1167 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.2W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TSOT-26
Package / Case:SOT-23-6 Thin, TSOT-23-6
0 Remaining View Similar

In Stock

$0.17
4,234

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN10H170SVT-13 DMN10H170SVTQ-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta) 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 5A, 10V 160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 10 V 9.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1167 pF @ 25 V 1167 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1.2W (Ta) 1.2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TSOT-26 TSOT-26
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

Related Product By Categories

IXTQ26N50P
IXTQ26N50P
IXYS
MOSFET N-CH 500V 26A TO3P
IRF710
IRF710
Fairchild Semiconductor
MOSFET N-CH 400V 2A TO220AB
PSMN075-100MSEX
PSMN075-100MSEX
Nexperia USA Inc.
MOSFET N-CH 100V 18A LFPAK33
TPS1101D
TPS1101D
Texas Instruments
MOSFET P-CH 15V 2.3A 8SOIC
TK090N65Z,S1F
TK090N65Z,S1F
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 30A TO247
FQP10N60C
FQP10N60C
Fairchild Semiconductor
MOSFET N-CH 600V 9.5A TO220-3
STP13NM60N
STP13NM60N
STMicroelectronics
MOSFET N-CH 600V 11A TO220-3
SPB80N06S2L-H5
SPB80N06S2L-H5
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
FCPF190N60-F152
FCPF190N60-F152
onsemi
MOSFET N-CH 600V 20.2A TO220F
H7N1002LS-E
H7N1002LS-E
Renesas Electronics America Inc
MOSFET N-CH 100V 75A 4LDPAK
EFC4612R-W-TR
EFC4612R-W-TR
onsemi
MOSFET N-CH 24V 6A EFCP
ATP114-TL-H
ATP114-TL-H
onsemi
MOSFET P-CH 60V 55A ATPAK

Related Product By Brand

1.5KE200CA-T
1.5KE200CA-T
Diodes Incorporated
TVS DIODE 171VWM 274VC DO201
FL4000077
FL4000077
Diodes Incorporated
CRYSTAL 40.0000MHZ 12PF SMD
FKC500010A
FKC500010A
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM3225 T&
SBR05U20LPS-7
SBR05U20LPS-7
Diodes Incorporated
DIODE SBR 20V 500MA 2DFN
SBR545D1-13
SBR545D1-13
Diodes Incorporated
DIODE SBR 45V 10A DPAK
PD3S140Q-7
PD3S140Q-7
Diodes Incorporated
SCHOTTKY RECTIFIER PDI323 T&R 3K
1N5248B-T
1N5248B-T
Diodes Incorporated
DIODE ZENER 18V 500MW DO35
FZT593TC
FZT593TC
Diodes Incorporated
TRANS PNP 100V 1A SOT223-3
DMNH4026SSDQ-13
DMNH4026SSDQ-13
Diodes Incorporated
MOSFET 2 N-CHANNEL 7.5A 8SO
74AUP2G06FZ4-7
74AUP2G06FZ4-7
Diodes Incorporated
IC INVERT OD 2CH 2-INP DFN1410-6
ZSM380GTA
ZSM380GTA
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT223
PT7M6122NLTA3EX
PT7M6122NLTA3EX
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23-3