DMN10H170SK3Q-13
  • Share:

Diodes Incorporated DMN10H170SK3Q-13

Manufacturer No:
DMN10H170SK3Q-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMN10H170SK3Q-13 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 12A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:140mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1167 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):42W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$0.70
870

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMN10H170SK3Q-13 DMN10H170SK3-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 5A, 10V 140mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 10 V 9.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1167 pF @ 25 V 1167 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 42W (Tc) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252-3 TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STD3NK80Z-1
STD3NK80Z-1
STMicroelectronics
MOSFET N-CH 800V 2.5A IPAK
SIHA24N65EF-GE3
SIHA24N65EF-GE3
Vishay Siliconix
N-CHANNEL 650V
IRF6794MTR1PBF
IRF6794MTR1PBF
Infineon Technologies
MOSFET N-CH 25V 32A DIRECTFET
SISH434DN-T1-GE3
SISH434DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 40V 17.6A/35A PPAK
NTMFS6H836NT1G
NTMFS6H836NT1G
onsemi
MOSFET N-CH 80V 15A/74A 5DFN
FKP202
FKP202
Sanken
MOSFET N-CH 200V 45A TO220
TK12A55D(STA4,Q,M)
TK12A55D(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 550V 12A TO220SIS
ZXMN6A07FTC
ZXMN6A07FTC
Diodes Incorporated
MOSFET N-CH 60V 1.2A SOT23-3
IRF6610TR1PBF
IRF6610TR1PBF
Infineon Technologies
MOSFET N-CH 20V 15A DIRECTFET
SI3473DV-T1-E3
SI3473DV-T1-E3
Vishay Siliconix
MOSFET P-CH 12V 5.9A 6TSOP
MCH6320-TL-W
MCH6320-TL-W
onsemi
MOSFET P-CH 12V 3.5A MCPH6
RTR030P02TL
RTR030P02TL
Rohm Semiconductor
MOSFET P-CH 20V 3A TSMT3

Related Product By Brand

SMF4L5.0A-7
SMF4L5.0A-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
NX53F62001
NX53F62001
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM5032 T&
NX71C50010
NX71C50010
Diodes Incorporated
XTAL OSCILLATOR XO SMD
PI7C9X7954AEVB
PI7C9X7954AEVB
Diodes Incorporated
EVAL BOARD PI7C9X7954/52A
BZX84C22Q-7-F
BZX84C22Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
DMN4027SSS-13
DMN4027SSS-13
Diodes Incorporated
MOSFET N-CH 40V 6A 8SO
PI6CG33401ZHIEX-13R
PI6CG33401ZHIEX-13R
Diodes Incorporated
CLOCK GENERATOR W-QFN5050-32 T&R
PI6C22405WE
PI6C22405WE
Diodes Incorporated
IC ZERO DELAY CLK BUFF 1:5 8SOIC
DGD2103AS8-13
DGD2103AS8-13
Diodes Incorporated
IC GATE DRVR HALF-BRIDGE 8SO
PI5PD2065WE
PI5PD2065WE
Diodes Incorporated
IC PWR SWITCH N-CHAN 1:1 8SOIC
PT8A3305LPEX
PT8A3305LPEX
Diodes Incorporated
HEATER CONTROLLER DIP-8
ZXRE4041CFTA
ZXRE4041CFTA
Diodes Incorporated
IC VREF SHUNT 0.5% SOT23