Diodes Incorporated-DMN1019UVT-13 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12 V
Current - Continuous Drain (Id) @ 25°C:	10.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 4.5V
Rds On (Max) @ Id, Vgs:	10mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id:	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	50.4 nC @ 8 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	2588 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1.73W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TSOT-26
Package / Case:	SOT-23-6 Thin, TSOT-23-6

Diodes Incorporated DMN1019UVT-13