Diodes Incorporated-DMN1019USN-13 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12 V
Current - Continuous Drain (Id) @ 25°C:	9.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.2V, 2.5V
Rds On (Max) @ Id, Vgs:	10mOhm @ 9.7A, 4.5V
Vgs(th) (Max) @ Id:	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	50.6 nC @ 8 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	2426 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	680mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SC-59-3
Package / Case:	TO-236-3, SC-59, SOT-23-3

Diodes Incorporated DMN1019USN-13