Diodes Incorporated-DMN1016UCB6-7 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	12 V
Current - Continuous Drain (Id) @ 25°C:	5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	20mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	4.2 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	423 pF @ 6 V
FET Feature:	-
Power Dissipation (Max):	920mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	U-WLB1510-6
Package / Case:	6-UFBGA, WLBGA

Diodes Incorporated DMN1016UCB6-7