Diodes Incorporated-DMJT9435-13 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	3 A
Voltage - Collector Emitter Breakdown (Max):	30 V
Vce Saturation (Max) @ Ib, Ic:	550mV @ 300mA, 3A
Current - Collector Cutoff (Max):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	125 @ 800mA, 1V
Power - Max:	1.2 W
Frequency - Transition:	160MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	SOT-223-3

Diodes Incorporated DMJT9435-13