DMJ70H1D3SJ3
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Diodes Incorporated DMJ70H1D3SJ3

Manufacturer No:
DMJ70H1D3SJ3
Manufacturer:
Diodes Incorporated
Package:
Tube
Datasheet:
DMJ70H1D3SJ3 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 700V 4.6A TO251
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):700 V
Current - Continuous Drain (Id) @ 25°C:4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:1.3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13.9 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:351 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):41W (Tc)
Operating Temperature:-55°C ~ 155°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-251
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Similar Products

Part Number DMJ70H1D3SJ3 DMJ70H1D3SH3   DMJ70H1D3SI3  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 700 V 700 V 700 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Tc) 4.6A (Tc) 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 2.5A, 10V 1.3Ohm @ 2.5A, 10V 1.3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.9 nC @ 10 V 13.9 nC @ 10 V 13.9 nC @ 10 V
Vgs (Max) - ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 351 pF @ 50 V 351 pF @ 50 V 351 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 41W (Tc) 41W (Tc) 41W (Tc)
Operating Temperature -55°C ~ 155°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-251 TO-251 TO-251
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Stub Leads, IPak TO-251-3 Stub Leads, IPak

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