DMHC4035LSDQ-13
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Diodes Incorporated DMHC4035LSDQ-13

Manufacturer No:
DMHC4035LSDQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMHC4035LSDQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 31V 40V SO-8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N and 2 P-Channel (Half Bridge)
FET Feature:Standard
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta), 3.7A (Ta)
Rds On (Max) @ Id, Vgs:45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.9nC @ 4.5V, 5.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:574pF @ 20V, 587pF @ 20V
Power - Max:1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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Similar Products

Part Number DMHC4035LSDQ-13 DMHC4035LSD-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type 2 N and 2 P-Channel (Half Bridge) 2 N and 2 P-Channel (Half Bridge)
FET Feature Standard Logic Level Gate
Drain to Source Voltage (Vdss) 40V 40V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta), 3.7A (Ta) 4.5A, 3.7A
Rds On (Max) @ Id, Vgs 45mOhm @ 3.9A, 10V, 65mOhm @ 4.2A, 10V 45mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.9nC @ 4.5V, 5.4nC @ 4.5V 12.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 574pF @ 20V, 587pF @ 20V 574pF @ 20V
Power - Max 1.5W (Ta) 1.5W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO

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