DMHC3025LSD-13
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Diodes Incorporated DMHC3025LSD-13

Manufacturer No:
DMHC3025LSD-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMHC3025LSD-13 Datasheet
ECAD Model:
-
Description:
MOSFET 2N/2P-CH 30V 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N and 2 P-Channel (Half Bridge)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:6A, 4.2A
Rds On (Max) @ Id, Vgs:25mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:590pF @ 15V
Power - Max:1.5W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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$0.94
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Similar Products

Part Number DMHC3025LSD-13 DMHC3025LSDQ-13   DMC3025LSD-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type 2 N and 2 P-Channel (Half Bridge) 2 N and 2 P-Channel (Half Bridge) N and P-Channel
FET Feature Logic Level Gate Standard Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 6A, 4.2A 6A, 4.2A 6.5A, 4.2A
Rds On (Max) @ Id, Vgs 25mOhm @ 5A, 10V 25mOhm @ 5A, 10V 20mOhm @ 7.4A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.7nC @ 10V 11.7nC @ 10V 9.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 15V 590pF @ 15V 501pF @ 15V
Power - Max 1.5W 1.5W 1.2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO

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