Diodes Incorporated-DMHC10H170SFJ-13 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N and 2 P-Channel (Half Bridge)
FET Feature:	Standard
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	2.9A, 2.3A
Rds On (Max) @ Id, Vgs:	160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	9.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1167pF @ 25V
Power - Max:	2.1W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	12-VDFN Exposed Pad
Supplier Device Package:	V-DFN5045-12

Diodes Incorporated DMHC10H170SFJ-13