DMG9N65CT
  • Share:

Diodes Incorporated DMG9N65CT

Manufacturer No:
DMG9N65CT
Manufacturer:
Diodes Incorporated
Package:
Tube
Datasheet:
DMG9N65CT Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 9A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2310 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):165W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.41
541

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMG9N65CT DMG9N65CTI   DMG4N65CT  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc) 9A (Tc) 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.3Ohm @ 4.5A, 10V 1.3Ohm @ 4.5A, 10V 3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V 39 nC @ 10 V 13.5 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2310 pF @ 25 V 2310 pF @ 25 V 900 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 165W (Tc) 13W (Tc) 2.19W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 ITO-220AB TO-220-3
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-220-3

Related Product By Categories

PJW2P10A_R2_00001
PJW2P10A_R2_00001
Panjit International Inc.
100V P-CHANNEL ENHANCEMENT MODE
FQL40N50F
FQL40N50F
Fairchild Semiconductor
MOSFET N-CH 500V 40A TO264-3
TSM085P03CV RGG
TSM085P03CV RGG
Taiwan Semiconductor Corporation
MOSFET P-CH 30V 64A 8PDFN
SQM120N04-1M7L_GE3
SQM120N04-1M7L_GE3
Vishay Siliconix
MOSFET N-CH 40V 120A TO263
SISS27ADN-T1-GE3
SISS27ADN-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 50A PPAK1212-8S
STL110NS3LLH7
STL110NS3LLH7
STMicroelectronics
MOSFET N-CH 30V 120A POWERFLAT
TK5A65W,S5X
TK5A65W,S5X
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 5.2A TO220SIS
NVMFS6H801NWFT1G
NVMFS6H801NWFT1G
onsemi
MOSFET N-CH 80V 23A/157A 5DFN
PMV20XN,215
PMV20XN,215
NXP USA Inc.
MOSFET N-CH 30V 4.8A TO236AB
IRF6602
IRF6602
Infineon Technologies
MOSFET N-CH 20V 11A DIRECTFET
IPW65R190C6FKSA1
IPW65R190C6FKSA1
Infineon Technologies
MOSFET N-CH 650V 20.2A TO247-3
NTMFS4C10NBT3G
NTMFS4C10NBT3G
onsemi
MOSFET N-CH 30V 16.4A/46A 5DFN

Related Product By Brand

D3V3X8U9LP3810-7
D3V3X8U9LP3810-7
Diodes Incorporated
TVS DIODE 3.3VWM 7VC U-DFN3810-9
TB1500L-13-F
TB1500L-13-F
Diodes Incorporated
THYRISTOR 140V 150A DO214AA
FL6000004
FL6000004
Diodes Incorporated
CRYSTAL CERAMIC SEAM3225 T&R 3K
BAV21WSQ-7-F
BAV21WSQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
DCX114EUQ-13-F
DCX114EUQ-13-F
Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 10
DDTA115EE-7-F
DDTA115EE-7-F
Diodes Incorporated
TRANS PREBIAS PNP 150MW SOT523
DMP3125L-7
DMP3125L-7
Diodes Incorporated
MOSFET P-CH 30V 2.5A SOT23
DMP2160UWQ-7
DMP2160UWQ-7
Diodes Incorporated
MOSFET P-CH 20V 1.5A SOT323 T&R
PT8A261PEX
PT8A261PEX
Diodes Incorporated
PIR CONTROLLER DIP-16
74LVC1G125Z-7
74LVC1G125Z-7
Diodes Incorporated
IC BUF NON-INVERT 5.5V SOT553
ULN2002AD16-U
ULN2002AD16-U
Diodes Incorporated
IC PWR RELAY 7NPN 1:1 16DIP
AP7315-11SA-7
AP7315-11SA-7
Diodes Incorporated
IC REG LINEAR 1.1V 150MA SOT23