Diodes Incorporated-DMG9926USD-13 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	8A
Rds On (Max) @ Id, Vgs:	24mOhm @ 8.2A, 4.5V
Vgs(th) (Max) @ Id:	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	867pF @ 15V
Power - Max:	1.3W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

Diodes Incorporated DMG9926USD-13