DMG6602SVTX-7
  • Share:

Diodes Incorporated DMG6602SVTX-7

Manufacturer No:
DMG6602SVTX-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMG6602SVTX-7 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 25V-30V TSOT26 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N and P-Channel Complementary
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:3.4A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs:60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13nC @ 10V, 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:400pF @ 15V, 420pF @ 15V
Power - Max:840mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:TSOT-26
0 Remaining View Similar

In Stock

$0.11
1,776

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMG6602SVTX-7 DMG6602SVT-7   DMG6602SVTQ-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Not For New Designs Active
FET Type N and P-Channel Complementary N and P-Channel N and P-Channel
FET Feature Standard Logic Level Gate, 4.5V Drive Standard
Drain to Source Voltage (Vdss) 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta), 2.8A (Ta) 3.4A, 2.8A 3.4A, 2.8A
Rds On (Max) @ Id, Vgs 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V 60mOhm @ 3.1A, 10V 60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.3V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V, 9nC @ 10V 13nC @ 10V 13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V, 420pF @ 15V 400pF @ 15V 400pF @ 15V
Power - Max 840mW (Ta) 840mW 840mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-26 TSOT-26 TSOT-26

Related Product By Categories

PMDXB950UPELZ
PMDXB950UPELZ
Nexperia USA Inc.
20 V, DUAL P-CHANNEL TRENCH MOSF
BSO615CGXUMA1
BSO615CGXUMA1
Infineon Technologies
MOSFET N/P-CH 8-SOIC
SQJ968EP-T1_GE3
SQJ968EP-T1_GE3
Vishay Siliconix
MOSFET 2 N-CH 60V POWERPAK SO8
SQJB42EP-T1_GE3
SQJB42EP-T1_GE3
Vishay Siliconix
MOSFET 2 N-CH 40V POWERPAK SO8
SQ3987EV-T1_GE3
SQ3987EV-T1_GE3
Vishay Siliconix
MOSFET 2 P-CHANNEL 30V 3A 6TSOP
PMT280ENEA,115
PMT280ENEA,115
Nexperia USA Inc.
1.5A, 100V, N CHANNEL, SILICON,
ALD110804PCL
ALD110804PCL
Advanced Linear Devices Inc.
MOSFET 4N-CH 10.6V 16DIP
SI7946DP-T1-E3
SI7946DP-T1-E3
Vishay Siliconix
MOSFET 2N-CH 150V 2.1A PPAK SO-8
DMC3018LSD-13
DMC3018LSD-13
Diodes Incorporated
MOSFET N/P-CH 30V 9.1A/6A 8-SOIC
APTMC120AM16CD3AG
APTMC120AM16CD3AG
Microchip Technology
MOSFET 2N-CH 1200V 131A D3
DF23MR12W1M1B11BOMA1
DF23MR12W1M1B11BOMA1
Infineon Technologies
MOSFET MODULE 1200V 25A
QS6M4TR
QS6M4TR
Rohm Semiconductor
MOSFET N/P-CH 30V/20V 1.5A TSMT6

Related Product By Brand

SMCJ5.0AQ-13-F
SMCJ5.0AQ-13-F
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMC
3.0SMCJ64AQ-13
3.0SMCJ64AQ-13
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR SMC
NX52C50001
NX52C50001
Diodes Incorporated
CLOCK SAW OSCILLATOR SEAM5032 T&
B350B-13
B350B-13
Diodes Incorporated
DIODE SCHOTTKY 50V 3A SMB
MMSZ5223B-7
MMSZ5223B-7
Diodes Incorporated
DIODE ZENER 2.7V 500MW SOD123
ZXTP2039FTC
ZXTP2039FTC
Diodes Incorporated
TRANS PNP 60V 1A SOT23-3
PI49FCT3807BQE+AMX
PI49FCT3807BQE+AMX
Diodes Incorporated
CLOCK BUFFER QSOP-20
PAM8603ANHR
PAM8603ANHR
Diodes Incorporated
IC AMP CLASS D STEREO 3W 24SSOP
74LVC1G125Z-7
74LVC1G125Z-7
Diodes Incorporated
IC BUF NON-INVERT 5.5V SOT553
PI3CH281LE
PI3CH281LE
Diodes Incorporated
IC MUX/DEMUX 1 X 4:1 16TSSOP
APX803L20-29W5-7
APX803L20-29W5-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT25
APX803L-26SA-7
APX803L-26SA-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23