DMG6602SVT-7
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Diodes Incorporated DMG6602SVT-7

Manufacturer No:
DMG6602SVT-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMG6602SVT-7 Datasheet
ECAD Model:
-
Description:
MOSFET N/P-CH 30V TSOT23-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:3.4A, 2.8A
Rds On (Max) @ Id, Vgs:60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id:2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:400pF @ 15V
Power - Max:840mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:TSOT-26
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Similar Products

Part Number DMG6602SVT-7 DMG6602SVTQ-7   DMG6602SVTX-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Not For New Designs Active Active
FET Type N and P-Channel N and P-Channel N and P-Channel Complementary
FET Feature Logic Level Gate, 4.5V Drive Standard Standard
Drain to Source Voltage (Vdss) 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 3.4A, 2.8A 3.4A, 2.8A 3.4A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs 60mOhm @ 3.1A, 10V 60mOhm @ 3.1A, 10V 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA 2.3V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V 13nC @ 10V 13nC @ 10V, 9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 15V 400pF @ 15V 400pF @ 15V, 420pF @ 15V
Power - Max 840mW 840mW 840mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-26 TSOT-26 TSOT-26

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