Diodes Incorporated-DMG6601LVT-7 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	3.8A, 2.5A
Rds On (Max) @ Id, Vgs:	55mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	422pF @ 15V
Power - Max:	850mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:	TSOT-26

Diodes Incorporated DMG6601LVT-7