DMG4N60SCT
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Diodes Incorporated DMG4N60SCT

Manufacturer No:
DMG4N60SCT
Manufacturer:
Diodes Incorporated
Package:
Tube
Datasheet:
DMG4N60SCT Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 4.5A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14.3 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:532 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):113W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number DMG4N60SCT DMG3N60SCT  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 2A, 10V 3.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.3 nC @ 10 V 12.6 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 532 pF @ 25 V 354 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 113W (Ta) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220AB
Package / Case TO-220-3 TO-220-3

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