Diodes Incorporated-DMG4800LK3-13 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:	1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8.7 nC @ 5 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	798 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1.71W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252-3
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

Diodes Incorporated DMG4800LK3-13