DMG3406L-7
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Diodes Incorporated DMG3406L-7

Manufacturer No:
DMG3406L-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMG3406L-7 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 3.6A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:50mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:495 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):770mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number DMG3406L-7 DMG3402L-7   DMG3404L-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) 4A (Ta) 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 3.6A, 10V 52mOhm @ 4A, 10V 25mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 1.4V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.2 nC @ 10 V 11.7 nC @ 10 V 13.2 nC @ 10 V
Vgs (Max) ±20V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 495 pF @ 15 V 464 pF @ 15 V 641 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 770mW (Ta) 1.4W (Ta) 780mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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