DMG2307LQ-7
  • Share:

Diodes Incorporated DMG2307LQ-7

Manufacturer No:
DMG2307LQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMG2307LQ-7 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 25V~30V SOT23 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:90mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.2 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:371.3 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):760mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.11
2,491

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMG2307LQ-7 DMG2307L-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Not For New Designs
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 2.5A, 10V 90mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V 8.2 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 371.3 pF @ 15 V 371.3 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 760mW (Ta) 760mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

ZXMN6A07FTA
ZXMN6A07FTA
Diodes Incorporated
MOSFET N-CH 60V 1.2A SOT23-3
FDS86240
FDS86240
onsemi
MOSFET N-CH 150V 7.5A 8SOIC
TW083N65C,S1F
TW083N65C,S1F
Toshiba Semiconductor and Storage
G3 650V SIC-MOSFET TO-247 83MOH
YJB200G06B-F2-0000HF
YJB200G06B-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 200A TO-263
SI4831DY-T1-E3
SI4831DY-T1-E3
Vishay Siliconix
MOSFET P-CH 30V 5A 8-SOIC
IRLR2908TRLPBF
IRLR2908TRLPBF
Infineon Technologies
MOSFET N-CH 80V 30A DPAK
FQA46N15_F109
FQA46N15_F109
onsemi
MOSFET N-CH 150V 50A TO3P
IXTP90N075T2
IXTP90N075T2
IXYS
MOSFET N-CH 75V 90A TO220AB
IPB023N06N3GATMA1
IPB023N06N3GATMA1
Infineon Technologies
MOSFET N-CH 60V 140A TO263-7
IPD60R600CPBTMA1
IPD60R600CPBTMA1
Infineon Technologies
MOSFET N-CH 600V 6.1A TO252-3
FKP280A
FKP280A
Sanken
MOSFET N-CH 280V 40A TO3PF
2N6661JTXL02
2N6661JTXL02
Vishay Siliconix
MOSFET N-CH 90V 860MA TO39

Related Product By Brand

SMF4L70AQ-7
SMF4L70AQ-7
Diodes Incorporated
TRANSIENT VOLTAGE SUPPRESSOR PP
G83270010
G83270010
Diodes Incorporated
CRYSTAL 32.768KHZ SMD
FD5000045
FD5000045
Diodes Incorporated
XTAL OSC XO SMD
BABS260
BABS260
Diodes Incorporated
PLANAR SCHOTTKY RECTIFIER ABS/SO
MBR1640
MBR1640
Diodes Incorporated
DIODE SCHOTTKY 40V 16A TO220AC
DDTB113ZU-7-F
DDTB113ZU-7-F
Diodes Incorporated
TRANS PREBIAS PNP 200MW SOT323
PI6C5912006ZHIEX
PI6C5912006ZHIEX
Diodes Incorporated
IC CLOCK BUFFER W-QFN5050-32
PI3HDMI221-AZFEX
PI3HDMI221-AZFEX
Diodes Incorporated
IC INTERFACE SPECIALIZED 56TQFN
AP5726WG-7
AP5726WG-7
Diodes Incorporated
IC LED DRV RGLTR PWM 750MA SOT26
PS8A0103WE
PS8A0103WE
Diodes Incorporated
HEATER CONTROLLER SO-8
APX803L-18W5-7
APX803L-18W5-7
Diodes Incorporated
RESET GENERATOR SOT25 T&R 3K
AP1506-33T5G-U
AP1506-33T5G-U
Diodes Incorporated
IC REG BUCK 3A TO220-5