DMG2305UXQ-13
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Diodes Incorporated DMG2305UXQ-13

Manufacturer No:
DMG2305UXQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMG2305UXQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 4.2A SOT23
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:52mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10.2 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:808 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.4W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number DMG2305UXQ-13 DMG2305UX-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta) 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 52mOhm @ 4.2A, 4.5V 52mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.2 nC @ 4.5 V 10.2 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 808 pF @ 15 V 808 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 1.4W (Ta) 1.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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