DMG2301LK-7
  • Share:

Diodes Incorporated DMG2301LK-7

Manufacturer No:
DMG2301LK-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMG2301LK-7 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 2.4A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:160mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.4 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:156 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):840mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.46
509

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMG2301LK-7 DMG2301L-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta) 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 160mOhm @ 1A, 4.5V 120mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.4 nC @ 10 V 5.5 nC @ 4.5 V
Vgs (Max) ±12V ±8V
Input Capacitance (Ciss) (Max) @ Vds 156 pF @ 6 V 476 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 840mW (Ta) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

IXTN200N10L2
IXTN200N10L2
IXYS
MOSFET N-CH 100V 178A SOT227B
TPH3206PD
TPH3206PD
Transphorm
GANFET N-CH 600V 17A TO220AB
MTD2N40ET4
MTD2N40ET4
onsemi
N-CHANNEL POWER MOSFET
SPB02N60C3
SPB02N60C3
Infineon Technologies
N-CHANNEL POWER MOSFET
PSMN9R5-100PS,127
PSMN9R5-100PS,127
NXP Semiconductors
NEXPERIA PSMN9R5-100PS - 89A, 10
IRF710PBF
IRF710PBF
Vishay Siliconix
MOSFET N-CH 400V 2A TO220AB
STP4NK80Z
STP4NK80Z
STMicroelectronics
MOSFET N-CH 800V 3A TO220AB
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
IRFW710BTM
IRFW710BTM
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
BUK9505-30A,127
BUK9505-30A,127
NXP USA Inc.
MOSFET N-CH 30V 75A TO220AB
NTMFS4836NT1G
NTMFS4836NT1G
onsemi
MOSFET N-CH 30V 11A/90A 5DFN
SI7635DP-T1-GE3
SI7635DP-T1-GE3
Vishay Siliconix
MOSFET P-CH 20V 40A PPAK SO-8

Related Product By Brand

FL2500039
FL2500039
Diodes Incorporated
CRYSTAL 25.0000MHZ 20PF SMD
FL4000001
FL4000001
Diodes Incorporated
CRYSTAL SURFACE MOUNT
FL4000226
FL4000226
Diodes Incorporated
CRYSTAL 40.0000MHZ 10PF SMD
FN2000113
FN2000113
Diodes Incorporated
XTAL OSC XO 20.0000MHZ CMOS SMD
BAS70-05-7
BAS70-05-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
SBR20150CTFP-JT
SBR20150CTFP-JT
Diodes Incorporated
DIODE ARRAY SCHOTTKY
FMMT558TC
FMMT558TC
Diodes Incorporated
TRANS PNP 400V 0.15A SOT23-3
DMP3056LDMQ-7
DMP3056LDMQ-7
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT26 T&R
DMN62D4LFB-7B
DMN62D4LFB-7B
Diodes Incorporated
MOSFET BVDSS: 41V~60V X2-DFN1006
DMP21D6UFB4-7B
DMP21D6UFB4-7B
Diodes Incorporated
MOSFET P-CH 20V 580MA 3DFN
PI3VT32X245BE
PI3VT32X245BE
Diodes Incorporated
IC BUS SWITCH 8 X 1:1 40BQSOP
AZ2940D-3.3E1
AZ2940D-3.3E1
Diodes Incorporated
IC REG LINEAR 3.3V 1A TO252-2