DMG2301L-13
  • Share:

Diodes Incorporated DMG2301L-13

Manufacturer No:
DMG2301L-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMG2301L-13 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 3A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:120mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:476 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.34
891

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMG2301L-13 DMG2301LK-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 120mOhm @ 2.8A, 4.5V 160mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 4.5 V 3.4 nC @ 10 V
Vgs (Max) ±8V ±12V
Input Capacitance (Ciss) (Max) @ Vds 476 pF @ 10 V 156 pF @ 6 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta) 840mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

TPH2R003PL,LQ
TPH2R003PL,LQ
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 100A 8SOP
AUIRLR3410TRL
AUIRLR3410TRL
Infineon Technologies
MOSFET N-CH 100V 17A DPAK
STQ1NK60ZR-AP
STQ1NK60ZR-AP
STMicroelectronics
MOSFET N-CH 600V 300MA TO92-3
PJD7NA60_R2_00001
PJD7NA60_R2_00001
Panjit International Inc.
600V N-CHANNEL MOSFET
IPP086N10N3
IPP086N10N3
Infineon Technologies
N-CHANNEL POWER MOSFET
IPZ65R065C7XKSA1
IPZ65R065C7XKSA1
Infineon Technologies
MOSFET N-CH 650V 33A TO247-4
IRF6633ATR1PBF
IRF6633ATR1PBF
Infineon Technologies
MOSFET N-CH 20V 16A DIRECTFET
STB30NM60N
STB30NM60N
STMicroelectronics
MOSFET N-CH 600V 25A D2PAK
STF11N52K3
STF11N52K3
STMicroelectronics
MOSFET N-CH 525V 10A TO220FP
SQ7415AEN-T1_BE3
SQ7415AEN-T1_BE3
Vishay Siliconix
MOSFET P-CH 60V 16A 1212-8
BUK654R0-75C,127
BUK654R0-75C,127
NXP USA Inc.
MOSFET N-CH 75V 120A TO220AB
RSS120N03FU6TB
RSS120N03FU6TB
Rohm Semiconductor
MOSFET N-CH 30V 12A 8SOP

Related Product By Brand

HX2126003Q
HX2126003Q
Diodes Incorporated
XTAL OSC XO 26.0000MHZ CMOS SMD
FKA000004
FKA000004
Diodes Incorporated
XTAL OSC XO 100.0000MHZ CMOS
FKC500014
FKC500014
Diodes Incorporated
XTAL OSC XO 125.0000MHZ CMOS
SDT30A100CTFP
SDT30A100CTFP
Diodes Incorporated
DIODE ARRAY SCHOTT 100V ITO220AB
DSR8U600
DSR8U600
Diodes Incorporated
DIODE GEN PURP 600V 8A TO220AC
BZX84C27Q-7-F
BZX84C27Q-7-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 3K
BZT52C11T-7
BZT52C11T-7
Diodes Incorporated
DIODE ZENER 11V 300MW SOD523
ZTX325STOA
ZTX325STOA
Diodes Incorporated
RF TRANS NPN 15V 1.3GHZ E-LINE
FMMTA92TA
FMMTA92TA
Diodes Incorporated
TRANS PNP 300V 0.2A SOT23-3
DMN2024U-13
DMN2024U-13
Diodes Incorporated
MOSFET N-CH 20V 6.8A SOT23 T&R 1
AP3843GUP-E1
AP3843GUP-E1
Diodes Incorporated
IC OFFLINE SWITCH 8DIP
PT7M6140CLTA3E
PT7M6140CLTA3E
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23-3