DMG1029SVQ-7
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Diodes Incorporated DMG1029SVQ-7

Manufacturer No:
DMG1029SVQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMG1029SVQ-7 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 41V~60V SOT563 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N and P-Channel Complementary
FET Feature:Standard
Drain to Source Voltage (Vdss):60V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta), 360mA (Ta)
Rds On (Max) @ Id, Vgs:1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA, 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.3nC @ 4.5V, 0.28nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:30pF @ 25V, 25pF @ 25V
Power - Max:450mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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Similar Products

Part Number DMG1029SVQ-7 DMG1029SV-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N and P-Channel Complementary N and P-Channel
FET Feature Standard Logic Level Gate
Drain to Source Voltage (Vdss) 60V 60V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta), 360mA (Ta) 500mA, 360mA
Rds On (Max) @ Id, Vgs 1.7Ohm @ 500mA, 10V, 4Ohm @ 500mA, 10V 1.7Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA, 3V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.3nC @ 4.5V, 0.28nC @ 4.5V 0.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 25V, 25pF @ 25V 30pF @ 25V
Power - Max 450mW (Ta) 450mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563

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