Diodes Incorporated-DMG1016VQ-13 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	870mA, 640mA
Rds On (Max) @ Id, Vgs:	400mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	60.67pF @ 16V
Power - Max:	530mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SOT-563

Diodes Incorporated DMG1016VQ-13