DMG1016UDWQ-7
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Diodes Incorporated DMG1016UDWQ-7

Manufacturer No:
DMG1016UDWQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMG1016UDWQ-7 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 8V~24V SOT363 T&R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N and P-Channel Complementary
FET Feature:Standard
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:1.066A (Ta), 845mA (Ta)
Rds On (Max) @ Id, Vgs:450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:736.6nC @ 4.5V, 0.62nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:60.67pF @ 10V, 59.76pF @ 16V
Power - Max:330mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
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Similar Products

Part Number DMG1016UDWQ-7 DMG1016UDW-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N and P-Channel Complementary N and P-Channel
FET Feature Standard Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 1.066A (Ta), 845mA (Ta) 1.07A, 845mA
Rds On (Max) @ Id, Vgs 450mOhm @ 600mA, 4.5V, 750mOhm @ 430mA, 4.5V 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 736.6nC @ 4.5V, 0.62nC @ 4.5V 0.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 60.67pF @ 10V, 59.76pF @ 16V 60.67pF @ 10V
Power - Max 330mW (Ta) 330mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363

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