Diodes Incorporated-DMG1013UWQ-13 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	820mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.62 nC @ 4.5 V
Vgs (Max):	±6V
Input Capacitance (Ciss) (Max) @ Vds:	59.76 pF @ 16 V
FET Feature:	-
Power Dissipation (Max):	310mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-323
Package / Case:	SC-70, SOT-323

Diodes Incorporated DMG1013UWQ-13