DMG1013UW-7
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Diodes Incorporated DMG1013UW-7

Manufacturer No:
DMG1013UW-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMG1013UW-7 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 820MA SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:820mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.622 nC @ 4.5 V
Vgs (Max):±6V
Input Capacitance (Ciss) (Max) @ Vds:59.76 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):310mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
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Similar Products

Part Number DMG1013UW-7 DMG1013UWQ-7   DMG1012UW-7  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 820mA (Ta) 820mA (Ta) 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 750mOhm @ 430mA, 4.5V 750mOhm @ 430mA, 4.5V 450mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.622 nC @ 4.5 V 0.62 nC @ 4.5 V 0.74 nC @ 4.5 V
Vgs (Max) ±6V ±6V ±6V
Input Capacitance (Ciss) (Max) @ Vds 59.76 pF @ 16 V 59.76 pF @ 16 V 60.67 pF @ 16 V
FET Feature - - -
Power Dissipation (Max) 310mW (Ta) 310mW (Ta) 290mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-323 SOT-323 SOT-323
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323

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