Diodes Incorporated-DMC67D8UFDBQ-13 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel Complementary
FET Feature:	Standard
Drain to Source Voltage (Vdss):	60V, 20V
Current - Continuous Drain (Id) @ 25°C:	390mA (Ta), 2.9A (Ta)
Rds On (Max) @ Id, Vgs:	4Ohm @ 500mA, 10V, 72mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id:	2.5V @ 250µA, 1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.4pC @ 4.5V, 7.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	41pF @ 25V, 443pF @ 16V
Power - Max:	580mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-UDFN Exposed Pad
Supplier Device Package:	U-DFN2020-6 (Type B)

Diodes Incorporated DMC67D8UFDBQ-13