DMC4029SSDQ-13
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Diodes Incorporated DMC4029SSDQ-13

Manufacturer No:
DMC4029SSDQ-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMC4029SSDQ-13 Datasheet
ECAD Model:
-
Description:
MOSFET N/P-CH 40V 7A/5.1A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N and P-Channel Complementary
FET Feature:Standard
Drain to Source Voltage (Vdss):40V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 6.5A (Ta)
Rds On (Max) @ Id, Vgs:24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.8nC @ 4.5V, 10.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1060pF @ 20V, 1154pF @ 20V
Power - Max:1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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In Stock

$0.38
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Similar Products

Part Number DMC4029SSDQ-13 DMC4029SSD-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N and P-Channel Complementary N and P-Channel Complementary
FET Feature Standard Standard
Drain to Source Voltage (Vdss) 40V 40V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 6.5A (Ta) 9A (Ta), 6.5A (Ta)
Rds On (Max) @ Id, Vgs 24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V 24mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 4.5V, 10.6nC @ 4.5V 8.8nC @ 4.5V, 10.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 20V, 1154pF @ 20V 1060pF @ 20V, 1154pF @ 20V
Power - Max 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO

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