DMC3060LVT-13
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Diodes Incorporated DMC3060LVT-13

Manufacturer No:
DMC3060LVT-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMC3060LVT-13 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 25V-30V TSOT26
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N and P-Channel Complementary
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:3.6A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs:60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:1.8V @ 250µA, 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:395pF @ 15V, 324pF @ 15V
Power - Max:830mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:TSOT-23-6
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Similar Products

Part Number DMC3060LVT-13 DMC3060LVTQ-13  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N and P-Channel Complementary N and P-Channel
FET Feature Standard Standard
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta), 2.8A (Ta) 3.6A (Ta), 2.8A (Ta)
Rds On (Max) @ Id, Vgs 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V 60mOhm @ 3.1A, 10V, 95mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA, 2.1V @ 250µA 1.8V @ 250µA, 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 10V 11.3nC @ 10V, 8.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 395pF @ 15V, 324pF @ 15V 395pF @ 15V, 324pF @ 15V
Power - Max 830mW 830mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6
Supplier Device Package TSOT-23-6 TSOT-26

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