DMC3018LSD-13
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Diodes Incorporated DMC3018LSD-13

Manufacturer No:
DMC3018LSD-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMC3018LSD-13 Datasheet
ECAD Model:
-
Description:
MOSFET N/P-CH 30V 9.1A/6A 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:9.1A, 6A
Rds On (Max) @ Id, Vgs:20mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:631pF @ 15V
Power - Max:2.5W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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Similar Products

Part Number DMC3018LSD-13 DMC3028LSD-13   DMC3016LSD-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Obsolete Active Active
FET Type N and P-Channel N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 9.1A, 6A 6.6A, 6.8A 8.2A, 6.2A
Rds On (Max) @ Id, Vgs 20mOhm @ 6.9A, 10V 28mOhm @ 6A, 10V 16mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 3V @ 250µA 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.4nC @ 10V 10.5nC @ 10V 25.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 631pF @ 15V 472pF @ 15V 1415pF @ 15V
Power - Max 2.5W 1.8W 1.2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO

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