DMC2025UFDB-7
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Diodes Incorporated DMC2025UFDB-7

Manufacturer No:
DMC2025UFDB-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMC2025UFDB-7 Datasheet
ECAD Model:
-
Description:
MOSFET BVDSS: 8V-24V U-DFN2020-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N and P-Channel Complementary
FET Feature:Standard
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:6A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs:25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA, 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12.3nC @ 10V, 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:486pF @ 10V, 642pF @ 10V
Power - Max:700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UDFN Exposed Pad
Supplier Device Package:U-DFN2020-6 (Type B)
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Similar Products

Part Number DMC2025UFDB-7 DMC2025UFDBQ-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N and P-Channel Complementary N and P-Channel Complementary
FET Feature Standard Standard
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 6A (Ta), 3.5A (Ta) 6A (Ta), 3.5A (Ta)
Rds On (Max) @ Id, Vgs 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V 25mOhm @ 4A, 4.5V, 75mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA, 1.4V @ 250µA 1V @ 250µA, 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 10V, 15nC @ 8V 12.3nC @ 10V, 15nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 486pF @ 10V, 642pF @ 10V 486pF @ 10V, 642pF @ 10V
Power - Max 700mW (Ta) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad
Supplier Device Package U-DFN2020-6 (Type B) U-DFN2020-6 (Type B)

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