DMC1229UFDB-7
  • Share:

Diodes Incorporated DMC1229UFDB-7

Manufacturer No:
DMC1229UFDB-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMC1229UFDB-7 Datasheet
ECAD Model:
-
Description:
MOSFET N/P-CH 12V U-DFN2020-6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N and P-Channel
FET Feature:- 
Drain to Source Voltage (Vdss):12V
Current - Continuous Drain (Id) @ 25°C:5.6A, 3.8A
Rds On (Max) @ Id, Vgs:29mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:914pF @ 6V
Power - Max:1.4W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-UDFN Exposed Pad
Supplier Device Package:U-DFN2020-6 (Type B)
0 Remaining View Similar

In Stock

$0.53
428

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMC1229UFDB-7 DMC1029UFDB-7  
Manufacturer Diodes Incorporated Diodes Incorporated
Product Status Active Active
FET Type N and P-Channel N and P-Channel
FET Feature - Standard
Drain to Source Voltage (Vdss) 12V 12V
Current - Continuous Drain (Id) @ 25°C 5.6A, 3.8A 5.6A, 3.8A
Rds On (Max) @ Id, Vgs 29mOhm @ 5A, 4.5V 29mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.6nC @ 8V 19.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 914pF @ 6V 914pF @ 6V
Power - Max 1.4W 1.4W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 6-UDFN Exposed Pad 6-UDFN Exposed Pad
Supplier Device Package U-DFN2020-6 (Type B) U-DFN2020-6 (Type B)

Related Product By Categories

PMGD280UN,115
PMGD280UN,115
Nexperia USA Inc.
MOSFET 2N-CH 20V 0.87A 6TSSOP
SSM6P15FU,LF
SSM6P15FU,LF
Toshiba Semiconductor and Storage
SMALL SIGNAL MOSFET P-CH X 2 VDS
SI3552DV-T1-E3
SI3552DV-T1-E3
Vishay Siliconix
MOSFET N/P-CH 30V 6TSOP
IRF7103TRPBF
IRF7103TRPBF
Infineon Technologies
MOSFET 2N-CH 50V 3A 8-SOIC
SSM6N16FE,L3F
SSM6N16FE,L3F
Toshiba Semiconductor and Storage
SMALL SIGNAL MOSFET N-CH X 2 VDS
DMN6022SSD-13
DMN6022SSD-13
Diodes Incorporated
MOSFET BVDSS: 41V 60V SO-8
2N7002DS6
2N7002DS6
Rectron USA
MOSFET 2 N-CH 60V 250MA SOT363
DMN5L06DWK-7-01
DMN5L06DWK-7-01
Diodes Incorporated
MOSFET BVDSS: 41V-60V SOT363
SI4973DY-T1-E3
SI4973DY-T1-E3
Vishay Siliconix
MOSFET 2P-CH 30V 5.8A 8-SOIC
SIZ702DT-T1-GE3
SIZ702DT-T1-GE3
Vishay Siliconix
MOSFET 2N-CH 30V 16A POWERPAIR
SI6933DQ-T1-E3
SI6933DQ-T1-E3
Vishay Siliconix
MOSFET 2P-CH 30V 8-TSSOP
DMN63D1LDW-13
DMN63D1LDW-13
Diodes Incorporated
MOSFET 2N-CH 60V 0.25A SOT363

Related Product By Brand

FL4000103
FL4000103
Diodes Incorporated
CRYSTAL 40.0000MHZ 15PF SMD
S1613B-66.0000(T)
S1613B-66.0000(T)
Diodes Incorporated
XTAL OSC XO 66.0000MHZ LVCMOS
PD3S130HQ-7
PD3S130HQ-7
Diodes Incorporated
DIODE SCHOTTKY 30V 1A POWERDI323
PR1003G-T
PR1003G-T
Diodes Incorporated
DIODE GEN PURP 200V 1A DO41
DZ23C11-7
DZ23C11-7
Diodes Incorporated
DIODE ZENER ARRAY 11V SOT23-3
BZT585B3V6T-7
BZT585B3V6T-7
Diodes Incorporated
DIODE ZENER 3.6V 350MW SOD523
ZTX705STZ
ZTX705STZ
Diodes Incorporated
TRANS PNP DARL 120V 1A E-LINE
ZTX689BSTOB
ZTX689BSTOB
Diodes Incorporated
TRANS NPN 20V 3A E-LINE
PI6CB18401ZHIEX
PI6CB18401ZHIEX
Diodes Incorporated
CLOCK BUFFER W-QFN5050-32 T&R 2.
PI6C2510-133ELE
PI6C2510-133ELE
Diodes Incorporated
IC PLL CLOCK DVR 10OUT 24-TSSOP
PI5USB2546QZHEX
PI5USB2546QZHEX
Diodes Incorporated
IC PWR SWITCH N-CHAN 1:1 16TQFN
AP2810DMTR-G1
AP2810DMTR-G1
Diodes Incorporated
IC PWR SWITCH N-CHAN 1:1 8SOIC