Diodes Incorporated-DMC10H220LSD-13 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel Complementary
FET Feature:	Standard
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	1.7A (Ta)
Rds On (Max) @ Id, Vgs:	220mOhm @ 1.6A, 10V, 250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	8.3nC @ 10V, 17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	340pF @ 50V, 1030pF @ 50V
Power - Max:	1W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

Diodes Incorporated DMC10H220LSD-13