DMC1015UPD-13
  • Share:

Diodes Incorporated DMC1015UPD-13

Manufacturer No:
DMC1015UPD-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DMC1015UPD-13 Datasheet
ECAD Model:
-
Description:
MOSFET 8V 24V POWERDI5060-8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N and P-Channel
FET Feature:Standard
Drain to Source Voltage (Vdss):12V
Current - Continuous Drain (Id) @ 25°C:9.5A, 6.9A
Rds On (Max) @ Id, Vgs:17mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1495pF @ 6V
Power - Max:2.3W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:PowerDI5060-8
0 Remaining View Similar

In Stock

$0.81
168

Please send RFQ , we will respond immediately.

Similar Products

Part Number DMC1015UPD-13 DMC1016UPD-13   DMC1018UPD-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N and P-Channel N and P-Channel N and P-Channel
FET Feature Standard Standard Standard
Drain to Source Voltage (Vdss) 12V 12V, 20V 12V, 20V
Current - Continuous Drain (Id) @ 25°C 9.5A, 6.9A 9.5A, 8.7A 9.5A, 6.9A
Rds On (Max) @ Id, Vgs 17mOhm @ 11.8A, 4.5V 17mOhm @ 11.8A, 4.5V 17mOhm @ 11.8A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.6nC @ 4.5V 32nC @ 8V 30.4nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds 1495pF @ 6V 1454pF @ 6V 1525pF @ 6V
Power - Max 2.3W 2.3W 2.3W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN
Supplier Device Package PowerDI5060-8 PowerDI5060-8 PowerDI5060-8

Related Product By Categories

SLA5065 LF830
SLA5065 LF830
Sanken
MOSFET 4N-CH 60V 7A 15-SIP
SQJQ906E-T1_GE3
SQJQ906E-T1_GE3
Vishay Siliconix
MOSFET 2 N-CH 40V POWERPAK8X8
PJS6800_S1_00001
PJS6800_S1_00001
Panjit International Inc.
30V N-CHANNEL ENHANCEMENT MODE M
SQJ992EP-T1_BE3
SQJ992EP-T1_BE3
Vishay Siliconix
DUAL N-CHANNEL 60-V (D-S) 175C M
DMN2024UDH-7
DMN2024UDH-7
Diodes Incorporated
MOSFET BVDSS: 8V-24V U-DFN3030-8
ALD310708APCL
ALD310708APCL
Advanced Linear Devices Inc.
MOSFET 4 P-CH 8V 16DIP
BSC750N10NDGATMA1
BSC750N10NDGATMA1
Infineon Technologies
MOSFET 2N-CH 100V 3.2A 8TDSON
SI4622DY-T1-GE3
SI4622DY-T1-GE3
Vishay Siliconix
MOSFET 2N-CH 30V 8A 8-SOIC
SI4539ADY-T1-GE3
SI4539ADY-T1-GE3
Vishay Siliconix
MOSFET N/P-CH 30V 4.4A 8-SOIC
SI5915BDC-T1-E3
SI5915BDC-T1-E3
Vishay Siliconix
MOSFET 2P-CH 8V 4A 1206-8
AO5804E
AO5804E
Alpha & Omega Semiconductor Inc.
MOSFET 2N-CH 20V 0.5A SC89-6L
SSM6L11TU(TE85L,F)
SSM6L11TU(TE85L,F)
Toshiba Semiconductor and Storage
MOSFET N/P-CH 20V 0.5A UF6 S

Related Product By Brand

FH3200025
FH3200025
Diodes Incorporated
CRYSTAL 32.0000MHZ 10PF SMD
FL1200061
FL1200061
Diodes Incorporated
CRYSTAL 12.0000MHZ 10PF SMD
BZX84C36W-7
BZX84C36W-7
Diodes Incorporated
DIODE ZENER 36V 200MW SOT323
MMBT4124-7-F
MMBT4124-7-F
Diodes Incorporated
TRANS NPN 25V 0.2A SOT23-3
FMMT596TC
FMMT596TC
Diodes Incorporated
TRANS PNP 200V 0.3A SOT23-3
PI49FCT3807BQE
PI49FCT3807BQE
Diodes Incorporated
IC CLK BUFFER 1:10 80MHZ 20QSOP
PI7C9X760ABLE
PI7C9X760ABLE
Diodes Incorporated
IC BRIDGE I2C/SPI TO UART
74AHCT1G126SE-7
74AHCT1G126SE-7
Diodes Incorporated
IC BUF NON-INVERT 5.5V SOT353
APX803L40-46SA-7
APX803L40-46SA-7
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL SOT23
PT7A7615S-13
PT7A7615S-13
Diodes Incorporated
IC SUPERVISOR 1 CHANNEL 8SO
AP63201WU-7
AP63201WU-7
Diodes Incorporated
IC REG BUCK ADJUSTABLE 2A TSOT26
AP7387-36Y-13
AP7387-36Y-13
Diodes Incorporated
LDO CMOS LOWCURR SOT89 T&R 2.5K