Diodes Incorporated-DI9435T - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

Part Number	DI9435T	DI9405T	DI9430T
Manufacturer	Diodes Incorporated	Diodes Incorporated	Diodes Incorporated
Product Status	Obsolete	Active	Active
FET Type	P-Channel	-	-
Technology	MOSFET (Metal Oxide)	-	-
Drain to Source Voltage (Vdss)	30 V	-	-
Current - Continuous Drain (Id) @ 25°C	5.3A (Ta)	-	-
Drive Voltage (Max Rds On, Min Rds On)	-	-	-
Rds On (Max) @ Id, Vgs	50mOhm @ 5.3A, 10V	-	-
Vgs(th) (Max) @ Id	1.4V @ 250µA	-	-
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V	-	-
Vgs (Max)	-	-	-
Input Capacitance (Ciss) (Max) @ Vds	950 pF @ 15 V	-	-
FET Feature	-	-	-
Power Dissipation (Max)	-	-	-
Operating Temperature	-	-	-
Mounting Type	Surface Mount	-	-
Supplier Device Package	8-SO	-	-
Package / Case	8-TSOP (0.130", 3.30mm Width)	-	-

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	50mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id:	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	40 nC @ 10 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	950 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-
Mounting Type:	Surface Mount
Supplier Device Package:	8-SO
Package / Case:	8-TSOP (0.130", 3.30mm Width)

Diodes Incorporated DI9435T