DGD2181MS8-13
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Diodes Incorporated DGD2181MS8-13

Manufacturer No:
DGD2181MS8-13
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Datasheet:
DGD2181MS8-13 Datasheet
ECAD Model:
-
Description:
IC GATE DRVR HALF-BRIDGE 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Driven Configuration:Half-Bridge
Channel Type:Independent
Number of Drivers:2
Gate Type:IGBT, N-Channel MOSFET
Voltage - Supply:10V ~ 20V
Logic Voltage - VIL, VIH:0.8V, 2.5V
Current - Peak Output (Source, Sink):1.9A, 2.3A
Input Type:Non-Inverting
High Side Voltage - Max (Bootstrap):600 V
Rise / Fall Time (Typ):40ns, 20ns
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO Type TH
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$0.90
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Similar Products

Part Number DGD2181MS8-13 DGD2181S8-13   DGD2184MS8-13   DGD2101MS8-13  
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
Driven Configuration Half-Bridge Half-Bridge Half-Bridge High-Side or Low-Side
Channel Type Independent Independent Synchronous Independent
Number of Drivers 2 2 2 2
Gate Type IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET IGBT, N-Channel MOSFET
Voltage - Supply 10V ~ 20V 10V ~ 20V 10V ~ 20V 10V ~ 20V
Logic Voltage - VIL, VIH 0.8V, 2.5V 0.8V, 2.5V 0.8V, 2.5V 0.8V, 2.5V
Current - Peak Output (Source, Sink) 1.9A, 2.3A 1.9A, 2.3A 1.4A, 1.8A 290mA, 600mA
Input Type Non-Inverting Non-Inverting Non-Inverting Non-Inverting
High Side Voltage - Max (Bootstrap) 600 V 600 V 600 V 600 V
Rise / Fall Time (Typ) 40ns, 20ns 40ns, 20ns 40ns, 20ns 70ns, 35ns
Operating Temperature 150°C (TJ) -40°C ~ 150°C (TJ) 150°C (TJ) -40°C ~ 125°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO Type TH 8-SO 8-SO Type TH 8-SO

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