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| Part Number | DGD2106MS8-13 | DGD2106S8-13 | DGD2101MS8-13 | DGD2103MS8-13 | DGD2104MS8-13 |
|---|---|---|---|---|---|
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Status | Active | Obsolete | Active | Active | Active |
| Driven Configuration | Half-Bridge | Half-Bridge | High-Side or Low-Side | Half-Bridge | Half-Bridge |
| Channel Type | Synchronous | Independent | Independent | Independent | Synchronous |
| Number of Drivers | 2 | 2 | 2 | 2 | 2 |
| Gate Type | IGBT, N-Channel MOSFET | IGBT, N-Channel MOSFET | IGBT, N-Channel MOSFET | IGBT, N-Channel MOSFET | IGBT, N-Channel MOSFET |
| Voltage - Supply | 10V ~ 20V | 10V ~ 20V | 10V ~ 20V | 10V ~ 20V | 10V ~ 20V |
| Logic Voltage - VIL, VIH | 0.6V, 2.5V | 0.6V, 2.5V | 0.8V, 2.5V | 0.8V, 2.5V | 0.8V, 2.5V |
| Current - Peak Output (Source, Sink) | 290mA, 600mA | 290mA, 600mA | 290mA, 600mA | 290mA, 600mA | 290mA, 600mA |
| Input Type | Non-Inverting | Non-Inverting | Non-Inverting | Inverting, Non-Inverting | Non-Inverting |
| High Side Voltage - Max (Bootstrap) | 600 V | 600 V | 600 V | 600 V | 600 V |
| Rise / Fall Time (Typ) | 100ns, 35ns | 100ns, 35ns | 70ns, 35ns | 70ns, 35ns | 70ns, 35ns |
| Operating Temperature | -40°C ~ 125°C (TA) | -40°C ~ 150°C (TJ) | -40°C ~ 125°C (TA) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO | 8-SO | 8-SO | 8-SO | 8-SO |
